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| N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - MARCH 94 FEATURES * 100 Volt VDS * RDS(on)=3 * Low threshold voltage ZVNL110A D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j :T stg VALUE 100 320 6 20 700 -55 to +150 UNIT V mA A V mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) SYMBOL MIN. BV DSS V GS(th) I GSS I DSS 100 0.75 1.5 100 10 500 750 4.5 3.0 225 75 25 8 7 12 15 13 MAX. UNIT CONDITIONS. V V nA A A mA mS pF pF pF ns ns ns ns V DD 25V, V GS=10V, I D=1A V DS=25 V, V GS=0V, f=1MHz I D=1mA, V GS=0V ID=1mA, V DS= V GS V GS= 20V, V DS=0V V DS=100 V, V GS=0 V DS=80 V, V GS=0V, T=125C (2) I D(on) R DS(on) g fs C iss C oss C rss td(on) tr td(off) tf V DS=25 V, V GS=5V V GS=5V,I D=250mA V GS=10V, I D=500mA V DS=25V,I D=500mA 3-400 |
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